Characteristics on Silicon Oxynitride Stack Layer of ALD-Al2O2 Passivation Layer for c-Si Solar Cell
作者： Kuk-Hyun Cho , , Young Joon Cho , Hyo Sik Chang
DOI: 10.3740/MRSK.2015.25.5.233
关键词:
摘要: Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection of atomic deposition (ALD) Al2O3. The is by plasma-enhanced chemical vapor protect Al2O3 from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied performance ALD film as functions and RF plasma effect system. Al2O3/SiON stacks coated at 400 oC showed higher lifetime values as-stacked state. contrast, quality stack obtained with power W capping-deposition 200 after process. best achieved films fired 850 oC. These results demonstrated potential passivated crystalline cells.
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