Surface preparation of Si substrates for epitaxial growth

摘要: Abstract We have improved and evaluated hydrophilic hydrophobic chemical treatments to prepare Si(001) Si(111) wafers for epitaxial growth substrates. In the case, we found that a simple treatment in mixture of H2SO4 H2O2 solutions has same effect as traditional RCA-based methods. However, boron contamination 5×1018 atoms cm−3 on resultant surface after removal its oxide layer is difficult prove nature blocks diffusion Si adatom at initial stage crystal growth. improvement preparation facilities order free sample from oxygen allows be obtained clean enough without problem. both cases, there no difference carbon concentration 2–4×1018 atoms cm−3. These results demonstrate advantages. further studied relationship structures Si(111). With increasing annealing temperature UHV, exhibited c(4×4) narrow range 580–750°C, eventually, very weak SiC transmission pattern appeared above 750°C. The simultaneous disappearance appearance indicates association reconstruction with carbon. 2.5–4×1018 atoms cm−3 insufficient atoms form component structure, therefore must another effect. A consequence this conclusion not responsible C-type defects, speculate may origin. showed ( 3 × ) between 400°C 600°C, independent contamination.