Structural investigations of homoepitaxial Si films grown at low temperature by pulsed magnetron sputtering on Si(111) substrates
作者： F. Fenske , S. Schulze , M. Hietschold , M. Schmidbauer
DOI: 10.1016/J.TSF.2007.08.129
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摘要: Abstract Using pulsed magnetron sputtering at low substrate temperature (Ts = 580 °C) the homoepitaxial growth on Si(111) was studied. The films were comprehensively characterized by cross-section transmission electron microscopy and various diffraction methods. Up to a film thickness of 1240 nm no breakdown epitaxial observed. surface microstructure, backscatter diffraction, exhibits exclusively crystalline structure with (111) orientation. Careful analysis selected area patterns high-resolution X-ray data clearly proves existence twinning/stacking faults in {111} planes. Besides these defects – which are typical for low-temperature epitaxy additional significant related energetic particle bombardment sputter deposition method
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