Electronic Structures of Hetero-Crystalline Semiconductor Superlattices
作者： T Nakayama , M Murayama
DOI: 10.1143/JPSJ.61.2419
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摘要: Crystal structures of hetero-crystalline superlattices made materials with different crystalline are proposed and band (hexagonal-diamond Si)/(cubic-diamond Si) (wurzite ZnS)/(zinc-blend ZnS) calculated using the first-principles pseudopotential method within local-density approximation. It is shown that Si have indirect gaps energy around 1.1 eV, while ZnS direct 3.8 eV. In both superlattices, states fundamental gap show charge densities localized in one constituent layers, indicating these give quantum well systems good quality. Band offsets also evaluated.
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