Low‐temperature homoepitaxy on Si(111)
作者： B. E. Weir , B. S. Freer , R. L. Headrick , D. J. Eaglesham , G. H. Gilmer
DOI: 10.1063/1.105966
关键词: Ion 、 Crystallography 、 Epitaxy 、 Molecular beam 、 Chemistry 、 Condensed matter physics 、 Silicon 、 Thin film 、 Crystal growth 、 Molecular beam epitaxy 、 Microstructure
摘要: We have compared ion channeling results with molecular dynamics simulations to investigate low‐temperature beam homoepitaxy on silicon. report the temperature dependence, rate and thickness dependence of films grown Si(111). For 350 A films, a transition good crystalline quality is seen in at growth temperatures ≊400 °C; this ≊100 °C for (100) epitaxy. The evolution surface microstructure leading breakdown epitaxial low discussed.
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