Single-crystal p–i–n-Si thin-film solar cells grown on Si substrate by sputter epitaxy

摘要: An intrinsic sputter-epitaxial (SE) Si film with a thickness of 1000 nm and 50-nm-thick n+ SE-Si were successfully grown as the light-absorbing layer emitter layer, respectively, on heavily doped p-Si(100) wafer to form p–i–n junction solar cell (SC). Heavily an electron concentration n 3 × 1020 cm−3 was by cosputtering Sb Si. The characteristics at 310 °C investigated in relation annealing temperature. oxygen ~1018 cm−3, which found originate from gas released chamber. Oxygen-induced thermal donors then became source film, reduced 1 1016 after forming-gas 700 because neutralized hydrogen. SC exhibited maximum internal quantum efficiency 73.7%.