Stability of surface reconstructions on silicon during RT deposition of Si submonolayers

作者: A.V. Zotov , S.V. Ryzhkov , V.G. Lifshits

DOI: 10.1016/0039-6028(95)00029-1

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摘要: Abstract Surface reconstruction stability of different surface phases formed by Al and Sb on Si(111) Si(100) surfaces has been studied monitoring the attenuation low-energy electron diffraction normal extra reflections during room temperature deposition Si submonolayers. The variety under consideration extensive information background regarding their atomic structure have enabled us to recognize relationship between structure.

参考文章(38)
T. Kinoshita, Y. Enta, H. Ohta, Y. Yaegashi, S. Suzuki, S. Kono, Photoelectron and inverse photoelectron spectroscopy studies of the Si(111)3 × 3-Sb surface Surface Science. ,vol. 204, pp. 405- 414 ,(1988) , 10.1016/0039-6028(88)90222-1
I. K. Robinson, W. K. Waskiewicz, R. T. Tung, J. Bohr, Ordering at Si(111)/a-Si and Si(111)/SiO2 interfaces. Physical Review Letters. ,vol. 57, pp. 2714- 2717 ,(1986) , 10.1103/PHYSREVLETT.57.2714
J. M. Gibson, H.-J. Gossmann, J. C. Bean, R. T. Tung, L. C. Feldman, Preservation of a 7×7 periodicity at a buried amorphous Si/Si(111) interface Physical Review Letters. ,vol. 56, pp. 355- 358 ,(1986) , 10.1103/PHYSREVLETT.56.355
B. E. Weir, B. S. Freer, R. L. Headrick, D. J. Eaglesham, G. H. Gilmer, J. Bevk, L. C. Feldman, Low‐temperature homoepitaxy on Si(111) Applied Physics Letters. ,vol. 59, pp. 204- 206 ,(1991) , 10.1063/1.105966
Y.‐W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, M. G. Lagally, Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001) Journal of Vacuum Science and Technology. ,vol. 8, pp. 201- 206 ,(1990) , 10.1116/1.577066
J. C. Woicik, T. Kendelewicz, K. E. Miyano, C. E. Bouldin, P. L. Meissner, P. Pianetta, W. E. Spicer, Local bonding structure of Sb on Si(111) by surface extended x-ray-absorption fine structure and photoemission Physical Review B. ,vol. 43, pp. 4331- 4339 ,(1991) , 10.1103/PHYSREVB.43.4331
H.-J. Gossmann, L. C. Feldman, Initial stages of silicon molecular-beam epitaxy: Effects of surface reconstruction. Physical Review B. ,vol. 32, pp. 6- 11 ,(1985) , 10.1103/PHYSREVB.32.6
J. Nogami, A. A. Baski, C. F. Quate, Aluminum on the Si(100) surface: Growth of the first monolayer. Physical Review B. ,vol. 44, pp. 1415- 1418 ,(1991) , 10.1103/PHYSREVB.44.1415
T Ichinokawa, H Itoh, A Schmid, D Winau, J Kirschner, Reconstructed structures in metal/Si(100) surfaces at high temperature observed by scanning tunneling microscopy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 12, pp. 2070- 2073 ,(1994) , 10.1116/1.587707
R. L. Headrick, I. K. Robinson, E. Vlieg, L. C. Feldman, Structure determination of the Si(111): B(3×3)R30°surface: Subsurface substitutional doping Physical Review Letters. ,vol. 63, pp. 1253- 1256 ,(1989) , 10.1103/PHYSREVLETT.63.1253