STM study on silicon(001) grown by magnetron sputter epitaxy
作者： Bernhard Vögeli , Samuel Zimmermann , Hans von Känel
DOI: 10.1016/S0040-6090(97)01134-6
关键词: Cavity magnetron 、 Materials science 、 Analytical chemistry 、 Sputtering 、 Surface structure 、 Scanning tunneling microscope 、 Silicon 、 Substrate (electronics) 、 Particle 、 Epitaxy
摘要: Abstract Radio-frequency magnetron sputter epitaxy (MSE) was used to perform homoepitaxy on Si(001). The samples, grown at different substrate temperatures and average particle energies, were analysed by scanning tunneling microscopy (STM). At low (
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