Direct tests of microscopic growth models using hot scanning tunneling microscopy movies.
作者： Chris Pearson , Michael Krueger , Eric Ganz
DOI: 10.1103/PHYSREVLETT.76.2306
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摘要: We use a hot scanning tunneling microscope to make time lapse movies of the growth Si on Si(001) substrate. In initial stages molecular beam epitaxial at 530 K, many small one dimensional (1D) islands are formed. The explanation this curious shape anisotropy has been controversial. analyze acquired during deposition and follow changes in individual find that rate 1D is independent length, supporting model anisotropic sticking explain island anisotropy. ratio side sites versus end $0.019\ifmmode\pm\else\textpm\fi{}0.003$.
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