Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization
作者： Davood Shahrjerdi , Michael M. Oye , Archie L. Holmes , Sanjay K. Banerjee
DOI: 10.1063/1.2234837
关键词: Capacitor 、 Dielectric 、 Thin film 、 Materials science 、 Molecular beam epitaxy 、 Equivalent oxide thickness 、 Germanium 、 Optoelectronics 、 Forming gas 、 Metal gate 、 Physics and Astronomy (miscellaneous)
摘要: Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists a few monolayers germanium grown in molecular beam epitaxy (MBE) system order to terminate MBE-grown silicon-doped (100) layer. An ex situ HfO2 high-κ dielectric equivalent oxide thickness 12A was deposited by using dc magnetron sputtering system. A midgap state density (Dit) 5×1011eV−1cm−2 measured the high-frequency conductance technique. rapid thermal annealing study performed examine integrity gate stack at different temperatures. In addition, forming gas anneal 400°C appears significantly reduce Dit revealed probing frequency dispersion behavior MOSCAPs.
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