Process for fabricating a control gate for a floating gate FET
作者： Hsingya A. Wang
DOI:
关键词: Materials science 、 Silicide 、 Polysilicon depletion effect 、 Layer (electronics) 、 Transistor 、 Doping 、 Electronic engineering 、 Policide 、 Line (electrical engineering) 、 Metal gate 、 Optoelectronics
摘要: A process of forming a floating gate field-effect transistor having multi-layer control line is disclosed. The includes first polysilicon layer, silicide layer provided on the and second layer. layers are formed as undoped to improve adhesion sandwiched therebetween. After all three formed, doped in an environment including POCl 3 . Because layers, may be using single pump-down.
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