Bias tuning charge-releasing leading to negative differential resistance in amorphous gallium oxide/Nb:SrTiO3 heterostructure
作者： P. C. Wang , P. G. Li , Y. S. Zhi , D. Y. Guo , A. Q. Pan
DOI: 10.1063/1.4939437
关键词: Nanotechnology 、 Gallium oxide 、 Amorphous solid 、 Thin film 、 Oxygen 、 Heterojunction 、 Resistive switching 、 Charge (physics) 、 Pulsed laser deposition 、 Optoelectronics 、 Materials science
摘要: … Since NDR phenomenon has been observed in bipolar RS device, this means that NDR and bipolar RS behavior should be related in physics behind, so deeper understanding of the …
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