Resistive switching effect in SrTiO3−δ∕Nb-doped SrTiO3 heterojunction
作者： M. C. Ni , S. M. Guo , H. F. Tian , Y. G. Zhao , J. Q. Li
DOI: 10.1063/1.2803317
关键词:
摘要: The authors report on the fabrication and properties of SrTiO3−δ∕Nb-doped SrTiO3 heterojunctions. current-voltage curves these junctions show hysteresis remarkable resistive switching behavior. Hysteresis was also observed in capacitance-voltage junctions. Upon applying voltage pulses, resistance heterojunctions can be switched between different states relaxation junction current after follows Curie–Von Schweidler law. results were discussed by considering role defects interfacial depletion region This work indicates that composed two oxides effect, which is useful for applications.
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