Effects of Film Thickness and Ar/O 2 Ratio on Resistive Switching Characteristics of HfO x -Based Resistive-Switching Random Access Memories
作者： Ting-Ting Guo , Ting-Ting Tan , Zheng-Tang Liu
DOI: 10.1088/0256-307X/32/1/016801
关键词:
摘要: Cu/HfOx/n+Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/O2 ratio on resistive switching (RS) characteristics HfOx films, in terms switch ratio, endurance properties, retention time multilevel storage. It is revealed that RS show strong dependence mainly by altering defects (oxygen vacancies) film. The sample with 20 nm 12:3 exhibits best behavior potential conduction mechanism all films interpreted based filamentary model.
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