Semiconductor device including field effect transistors
作者： Bonyoung Koo , Seung Hun Lee , Hyun Jung Lee , Sunjung Kim , Dongwoo Kim
DOI:
关键词: Cladding (fiber optics) 、 Electronic engineering 、 Electrode 、 Optoelectronics 、 Semiconductor device 、 Materials science 、 Field-effect transistor 、 Lattice constant 、 Buffer (optical fiber)
摘要: A semiconductor device includes a buffer layer on substrate, the having lattice constant different from that of fin structure upwardly protruding layer, gate electrode crossing over structure, cladding at side and covering top surface sidewalls an interfacial between including same element as layer.
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