Methods of Fabricating Devices Including Source/Drain Region with Abrupt Junction Profile

摘要: Provided are methods of fabricating a semiconductor device including metal oxide (MOS) transistor. The include forming gate pattern on substrate. substrate is etched using the as an etching mask to form pair active trenches spaced apart from each other in Epitaxial layers formed trenches, respectively. respective epitaxial by sequentially stacking first and second layers. layer having lattice constant greater than substrate, composition ratio different that layer. Semiconductor devices also provided.