Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
作者： Christopher K. Olsen , Luis Fernandez
DOI:
关键词: Substrate (electronics) 、 Etching (microfabrication) 、 Gas cluster ion beam 、 Conformal map 、 Optics 、 Process (computing) 、 Optoelectronics 、 Layer (electronics) 、 Materials science 、 Aspect ratio (image)
摘要: A method for opening a conformal layer at the bottom of contact via on substrate is described. The includes providing having first with pattern formed therein and second conformally deposited within to establish characterized by an initial mid-critical dimension (CD). further etching through extend form while retaining least part top surface layer, corner entrance pattern, sidewalls wherein performed irradiating gas cluster ion beam (GCIB) according GCIB process.
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