Post CMP planarization by cluster ION beam etch
作者： Shiang-Bau Wang
DOI:
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摘要: The embodiments of mechanisms described enables improved planarity substrates, which is crucial for patterning and device yield improvement. Chemical-mechanical polishing (CMP) used to remove film planarize the substrate before final thickness reached or all removal polished. then measured its topography thickness. data are by gas cluster ion beam (GCIB) etch tool determine how much on a particular location. GCIB layer meet requirements uniformity target. enable requirement advanced processing technologies.
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