Super junction constant current diode preparation method
作者： Zhao Shengzhe
DOI:
关键词: Polycrystalline silicon 、 Silicon nitride 、 Dry etching 、 Semiconductor 、 Substrate (electronics) 、 Silicon 、 Optoelectronics 、 Groove (engineering) 、 Materials science 、 Layer (electronics)
摘要: The present invention provides a super junction constant current diode preparation method. method comprises: forming an oxide layer and window on the surface of semiconductor silicon substrate; performing dry etching substrate through window, first groove nitride side walls at wall groove; to form second filling with P-type epitaxial layer, structure; removing walls, grid whole device; depositing polycrystalline dielectric front metal back by employing technology. structure becomes resistor obtained has high pressure resistance so as protect LED frombeing damaged multiple currents voltages.
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