Trench schottky rectifier device and method for manufacturing the same
作者： Tse-Chuan Su , Mei-Ling Chen , Hung-Hsin Kuo , Kou-Liang Chao
DOI:
关键词: Schottky diode 、 p–n junction 、 Electrode 、 Materials science 、 Schottky barrier 、 Electrical conductor 、 Optoelectronics 、 Layer (electronics) 、 Trench 、 Substrate (printing) 、 Electrical engineering
摘要: A trench Schottky rectifier device includes a substrate having first conductivity type, plurality of trenches formed in the substrate, and an insulating layer on sidewalls trenches. The are filled with conductive structure. There is electrode overlying structure thus contact forms between substrate. embedded doped regions second type located under Each region form PN junction to pinch off current flowing toward so as suppress leakage.
lens.org 参考文章(27)
Richard A. Blanchard, Adrian I. Cogan, Dual-gate high density fet ,(1987)
Chung-Min Liu, Ming-Che Kao, Pu-Ju Kung, Ming-Jinn Tsai, Chih-Wei Hsu, Method of forming trench MOS device and termination structure ,(2001)
Klaus Lau, Wolfgang Krautschneider, Lothar Risch, Arrangement with self-amplifying dynamic MOS transistor storage cells ,(1991)
Ching-Yuan Wu, LOCOS-based junction-pinched schottky rectifier and its manufacturing methods ,(2004)
Geeng-Chuan Chern, Wayne Y. W. Hsueh, Paul Chang, Vladimir Rodov, Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication ,(2000)
Mei-Ling Chen, Kuo-Liang Chao, Hung-Hsin Kuo, Rectifier with vertical mos structure ,(2012)
Fwu-Iuan Hshieh, Koon Chong So, Trench schottky rectifier ,(2001)
Anup Bhalla, Madhur Bobde, Lingpeng Guan, High voltage MOSFET diode reverse recovery by minimizing P-body charges ,(2009)
Mark Rinehimer, Rectifier With PN Clamp Regions Under Trenches ,(2008)
Yeeheng Lee, Yongping Ding, John Chen, Power MOSFET Device with Self-Aligned Integrated Schottky and its Manufacturing Method ,(2010)