Intermediate band position modulated by Zn addition in Ti doped CuGaS2
作者： Y. Seminóvski , P. Palacios , P. Wahnón
DOI: 10.1016/J.TSF.2010.12.136
关键词: Electronic structure 、 Direct and indirect band gaps 、 Chalcopyrite 、 Materials science 、 Doping 、 Semimetal 、 Analytical chemistry 、 Semiconductor 、 Inorganic chemistry 、 Band gap 、 Density functional theory
摘要: Many works have been done recently with the aim of obtaining intermediate band semiconductors, due to significant importance improving solar cell efficiency. Intermediate materials based on CuGaS2 chalcopyrite semiconductor are one proposed and specifically Ti doped is a promising structure form band. Here we present an ab-initio study using density functional theory in this type chalcogens. Several concentrations Zn substituting Ga atoms studied their electronic densities states were obtained. Results demonstrate band-gap shortening position modulation inside by addition.
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