Methods of forming semiconductor constructions

摘要: The invention includes a semiconductor construction having pair of channel regions that have sub-regions doped with indium and surrounded by boron. A transistor constructions are located over the separated an isolation region. transistors gates wider than underlying sub-regions. also has insulative spacers along gate sidewalls. Each is between source/drain extend beneath spacers. extension extends region farther on only one side each constructions. methods forming