(In,Ga)P buffer layers for ZnSe-based visible emitters
作者： K. Lu , J.L. House , P.A. Fisher , C.A. Coronado , E. Ho
DOI: 10.1016/0022-0248(94)90771-4
关键词: Optics 、 Photoluminescence 、 Luminescence 、 Reflection high-energy electron diffraction 、 Full width at half maximum 、 Analytical chemistry 、 Molecular beam epitaxy 、 Thin film 、 Epitaxy 、 Heterojunction 、 Chemistry
摘要: Abstract The growth of ZnSe on pseudomorphic and partially relaxed (In,Ga)P epitaxial buffer layers has been investigated. were grown in separate gas source molecular beam epitaxy systems using elemental sources for the cation species cracked PH 3 H 2 Se anion species. Surface morphology studies scanning electron microscopy showed that featureless at a magnification 1.2x10 4 . Four crystal (400) X-ray rocking curves indicated full width half maximum (FWHM) was 130″, while layer FWHM 18″. (511) reflections used to measure residual strain as well composition layers. low temperature photoluminescence spectra from films exhibited intensities donor-bound free exciton transitions nearly equal magnitude, due extended defects, suggesting highly pure material. luminescence also detected.
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