Room temperature II–VI lasers with 2.5 mA threshold

摘要: Buried-ridge II–VI laser diodes operating at 511 nm room temperature were fabricated from separate-confinement heterostructures. The layers consisted of a pseudomorphic CdZnSe quantum well and lattice-matched ZnSSe light-guiding MgZnSSe cladding layers. Stripe gain-guide lasers similar wafers exhibited threshold current densities as low 630 A/cm2 voltages less than 9 V. buried-ridge devices operated in single lateral transverse modes under pulsed excitation temperature. Threshold currents 2.5 mA 50% duty cycles demonstrated with these structures. A conventional model for the was used an initial attempt to fit thresholds functions cavity length (100–325 K); excitonic mechanisms not included. electron lifetime layer only adjustable parameter model. Good agreement between measurement theory obtained taken 42 ps; this value also agrees independent measurements. All reports diode date indicate very short device lifetimes Electroluminescence topography TEM studies carried out on both LEDs stripe order gain insight failure study their evolution. Two types dark line defects (along 〈100〉 〈110〉 directions) patches extremely large (1010 cm-2) dislocation network consisting elongated segments observed degraded devices. This work represents first detailed indicates that rapid is due formation high required lasing.