The influence of structural defects in ZnSe/GaAs heterostructures on luminescence properties
作者： Q Liu , H Lakner , C Mendorf , W Taudt , M Heuken
DOI: 10.1088/0022-3727/31/19/010
关键词:
摘要: Cathodoluminescence (CL) measurements were carried out on ZnSe/GaAs heterostructures grown by metal-organic vapour-phase epitaxy, partly with different pre-growth treatments. The influence of structural defects the luminescence properties ZnSe epilayers both above and below experimentally obtained value critical thickness for strain relaxation studied. CL results combined scanning transmission electron microscopy demonstrate that there is a correlation between deep-level emission at around 580 nm named SA emission. In addition, strong treatment crystalline quality was observed.
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