Structure of heteroepitaxial GaAs on Si

摘要: Abstract The current interest in GaAs grown on nonpolar substrates such as Si has been stimulated by the potential technological advantages of this system. Although two major obstacles impeding progress heteroepitaxial growth (100) substrates, large lattice mismatch and formation antiphase boundaries, have recently overcome, understanding microstructural process is still not satisfactory. We are presenting new x-ray scattering results which indicate that thin films compressed film plane at room temperature, while thicker under tensil stress, cross-over region being about 1000A. In addition, we show translationally incommensurate with substrate in-plane [001] axes misaligned 3–5°. Thermal expansion measurements out-of-plane parameters thermal follows from anharmonicity substrate.