Photoreflectance characterization of OMVPE GaAs on Si

摘要: Abstract Photoreflectance, a contactless, non-destructive optical characterization tool, can be of great utility to the material scientist in identifying crystal growth problems and ascertaining quality very short time. It provides precise measurement spectral energy fundamental absorption edge higher lying critical point transitions. Shifts these energies are measure built-in strain strain-layered heterostructures. Moreover, so-called Franz-Keldysh oscillation extrema is directly related net carrier concentration semiconductor under study. We have used Photoreflectance technique determine quality, concentration, epitaxial GaAs grown by OMPVE on Si substrates. The study includes determination parameters as function various conditions, post-growth anneal cycle, spot position wafer. Results correlated with X-ray diffraction, C - V measurements.