Growth by molecular beam epitaxy of indium antimonide on cleaved and on polished barium fluoride

摘要: Abstract Indium antimonide has been grown on the (111) face of cleaved and polished BaF2 by molecular beam epitaxy (MBE). X-ray Nomarski microscopic examination indicate high quality films. Films were doped n p type with silicon beryllium. The dopant incorporation is close to that established for MBE GaAs growth. Hall resistivity measurements a low temperature conversion p-type conduction which attributed strain arising from difference between thermal expansions film substrate. This effect imposes severe limitations practical applications this film-substrate system. existence other substrates discussed.