Preparation and properties of epitaxial films of indium-doped lead tin telluride
作者： John L. Davis , Bland B. Houston , Antonio Martinez
DOI: 10.1016/0040-6090(84)90049-X
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摘要: Abstract Several hundred epitaxial films of indium-doped lead tin telluride were grown on BaF 2 substrates using a hot-wall method and source material containing 0.5 at.%In. Films from materials SnTe at concentrations 0, 22, 24.8 27.7 mol.%. The growth procedure, preparation substrate are described. characterized by van der Pauw measurements the mobility carrier concentration room temperature 77 K. As finally developed, procedures gave high yield with mobilities K in range 3.5–4.5 m V -1 s .
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