PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot‐wall technique
作者： I. Kasai , D. W. Bassett , J. Hornung
DOI: 10.1063/1.323111
关键词:
摘要: PbTe and Pb0.8Sn0.2Te epitaxial films have been grown on cleaved BaF2 substrates by a modified hot‐wall technique. Relatively fast growth rates of 3–5 μm/h used to prepare high‐quality between 5 13 μm in thickness. Both p‐ n‐type temperature control separate Te reservoir included the apparatus. Carrier concentrations mobilities orders 2×1016–7×1017/cm3 1–3.3×104 cm2/V sec, respectively, measured as‐grown at 77 K. homojunction PbTe‐Pb0.8Sn0.2Te heterojunction layers prepared. Diode elements engraved mesa etching shown R0A products 19 38 Ω cm2 for structures
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(11)
R. F. Bis, J. R. Dixon, J. R. Lowney, Thick Epitaxial Films of Pb1−xSnxTe Journal of Vacuum Science and Technology. ,vol. 9, pp. 226- 230 ,(1972) , 10.1116/1.1316562
K. Duh, H. Preier, PbSe heteroepitaxy by the hot wall technique Thin Solid Films. ,vol. 27, pp. 247- 250 ,(1975) , 10.1016/0040-6090(75)90031-0
S. K. SURI‡, B. L. SHARMA, Electrical and photovoltaic properties of PbS-CdSe heterojunctions† International Journal of Electronics. ,vol. 36, pp. 623- 628 ,(1974) , 10.1080/00207217408900455
K.Y. Duh, J.N. Zemel, Properties of PbS epitaxial films grown by a hot wall method Thin Solid Films. ,vol. 26, pp. 165- 179 ,(1975) , 10.1016/0040-6090(75)90176-5
P. Perfetti, F. Cerrina, C. Coluzza, G. Margaritondo, Lead telluride‐germanium heterojunction properties Journal of Applied Physics. ,vol. 45, pp. 972- 973 ,(1974) , 10.1063/1.1663357
I. Kasai, D.R. Daniel, H. Maier, H.-D. Wurzinger, Growth and morphology of Pb1−ySnySe and (PbSe)1−z(SnTe)z alloys from the vapor phase Journal of Crystal Growth. ,vol. 23, pp. 201- 206 ,(1974) , 10.1016/0022-0248(74)90235-8
F. Bernabucci, G. Margaritondo, P. Migliorato, P. Perfetti, Near-IR detection by PbSGaAs heterojunctions Physica Status Solidi (a). ,vol. 15, pp. 621- 627 ,(1973) , 10.1002/PSSA.2210150232
I. Kasai, J. Hornung, J. Baars, Pb1-xSnxTe epitaxial layers prepared by the hot-wall technique Journal of Electronic Materials. ,vol. 4, pp. 299- 311 ,(1975) , 10.1007/BF02655407
A. Lopez-Otero, L.D. Haas, High mobility as-growm PbTe films prepared by the hot wall technique Thin Solid Films. ,vol. 23, pp. 1- 6 ,(1974) , 10.1016/0040-6090(74)90211-9
C.C. Wang, S.R. Hampton, Lead telluride-lead tin telluride heterojunction diode array Solid-State Electronics. ,vol. 18, pp. 121- 125 ,(1975) , 10.1016/0038-1101(75)90095-7