Deep-level defects in epitaxial 4H-SiC irradiated with low-energy electrons

K. K. Kew , C. R. Eddy , B. L. Van Mil , R. L. Myers-Ward
Materiały Elektroniczne 26 -34

2
2010
Mitigating Issues that Impact 4H-SiC Epitaxy for Reliable Power Electronics

N. Mahadik , R.L. Myers-Ward , V.D. Wheeler , R.S. Stahlbush
Meeting Abstracts ( 33) 2188 -2188

2011
Optical limiting with semiconductor quantum dots

D. G. Hendershot , D. K. Gaskill , B. L. Justus , A. D. Berry
conference on lasers and electro-optics

1993
Comment on: Modeling of the electron mobility in GaN materials. Author's reply

R. Y. Korotkov , Ibrahim M. Abdel-Motaleb , D. K. Gaskill , D. L. Rode
Journal of Applied Physics 99 ( 3)

2006
Development of Scalable Graphene RF Field-Effect Transistors

P Asbeck , Joshua Robinson , Mark Fanton , D Curtis
Meeting Abstracts ( 38) 1294 -1294

2009
The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties

D. K. Gaskill , A. E. Wickenden , K. Doverspike , B. Tadayon
Journal of Electronic Materials 24 ( 11) 1525 -1530

35
1995
Doping of gallium nitride using disilane

A. E. Wickenden , L. B. Rowland , K. Doverspike , D. K. Gaskill
Journal of Electronic Materials 24 ( 11) 1547 -1550

44
1995
Growth of GaN films using trimethylgallium and hydrazine

D. K. Gaskill , N. Bottka , M. C. Lin
Applied Physics Letters 48 ( 21) 1449 -1451

58
1986
Surface potential and thin film quality of low work function metals on epitaxial graphene

Matthew DeJarld , Paul M. Campbell , Adam L. Friedman , Marc Currie
Scientific Reports 8 ( 1) 16487

11
2018
Graphene review: An emerging RF technology

J. S. Moon , M. Antcliffe , H. C. Seo , S. C. Lin
topical meeting on silicon monolithic integrated circuits in rf systems 199 -202

2
2012
Bilayer graphene grown on 4H-SiC (0001) step-free mesas.

L.O. Nyakiti , R. L. Myers-Ward , V. D. Wheeler , E. A. Imhoff
Nano Letters 12 ( 4) 1749 -1756

48
2012
OMCVD of thin films from metal diketonates and triphenylbismuth

A. D. Berry , R. T. Holm , M. Fatemi , D. K. Gaskill
Journal of Materials Research 5 ( 6) 1169 -1175

43
1990
Photoreflectance Characterization and Control of Defects in Gan by Etching with an Inductively Coupled Plasma

O. J. Glembocki , D. K. Gaskill , S. M. Prokes , S. W. Pearton
MRS Proceedings 743 ( 1)

2002
Photoreflectance Probing of Below Gap States in Gan/Algan High Electron Mobility Transitor Structures

D. K. Gaskill , O. J. Glembocki , B. Peres , R. Henry
MRS Proceedings 743 ( 1)

1
2002
Determining the nature of the gap in semiconducting graphene.

J. C. Prestigiacomo , A. Nath , M. S. Osofsky , S. C. Hernández
Scientific Reports 7 ( 1) 41713

8
2017
Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates

M. A. Mastro , R. T. Holm , N. D. Bassim , D. K. Gaskill
arXiv: Applied Physics

12
2020
Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions

B. L. VanMil , R. E. Stahlbush , R. L. Myers-Ward , K.-K. Lew
Journal of Vacuum Science & Technology B 26 ( 4) 1504 -1507

30
2008
Oxygen functionalised epitaxial graphene sensors for enhanced polar organic chemical vapour detection

V. K. Nagareddy , J. P. Goss , N. G. Wright , A. B. Horsfall
ieee sensors 1 -4

2
2012
A Microscopic Evaluation of the Surface Structure of OMVPE Deposited α-GaN Epilayers

G. S. Rohrer , J. Payne , W. Qian , M. Skowronski
MRS Proceedings 395 ( 1) 381 -386

7
1995