Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering
作者： Erica Pereira da Silva , Michel Chaves , Gilvan Junior da Silva , Larissa Baldo de Arruda , Paulo Noronha Lisboa-Filho
关键词: Sputter deposition 、 Silicon 、 Wurtzite crystal structure 、 Optics 、 Crystallite 、 Thin film 、 Analytical chemistry 、 Doping 、 Surface roughness 、 Materials science 、 Zinc
摘要: Zinc oxide (ZnO) and aluminum-doped zinc (ZnO:Al) thin films were deposited onto glass silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both at growth rate of 12.5 nm/min to thickness around 750 nm. In the visible region, exhibit optical transmittances which are greater than 80%. The energy gap ZnO increased from 3.28 eV 3.36 upon doping with Al. This increase is related in carrier density 5.9 × 1018 cm-3 2.6 1019 cm-3. RMS surface roughness grown on 14 28 nm even only 0.9% Al content. XRD analysis revealed that polycrystalline preferential parallel (002) plane, corresponds wurtzite structure ZnO.
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