High Efficiency Shallow p+nn+ Cadmium Telluride Solar Cells

摘要: Significant improvements have been achieved in preparing CdTe shallow homojunctions with conversion efficiencies over 11% AM1 (higher than 13% proper A.R. coating). The cells are fabricated by using a close spaced vapor transport (C.S.V.T.) technique to form p-type epitaxial layer upon single crystal substrate (n-type CdTe). combined use of doping gradient the n-base material, heavily p doped on front and an optimization junction deepness lead p+nn+ structures reproducible way. best performance parameters Voc∼0,85 Volt, Isc∼20 mA/cm2 F.F.∼70%. shown no degradation after 18 months.