Calculated efficiencies of practical GaAs and Si solar cells including the effect of built-in electric fields

摘要: Abstract The performance of GaAs solar cells has been calculated as a function the doping levels, using practical values for transport parameters. Calculations show that surface recombination is more probable cause than in junction region poor efficiencies obtained practice. Electric fields built into cell by gradations may be used to reduce losses and produce an efficiency exceeding 20 per cent velocity 10 6 cm/sec. This figure allows finite resistance layer, effect which considered detail several cases. Results Si are also presented. These well accord with For both materials consideration given degradation brought about particle bombardment.