1.55 μm emission from GaInNAs with indium-induced increase of N concentration
作者： W. Zhou , K. Uesugi , I. Suemune
DOI: 10.1063/1.1606886
关键词: Multiple quantum 、 Superlattice 、 Photoluminescence 、 Optoelectronics 、 N incorporation 、 Epitaxy 、 Gallium arsenide 、 Materials science 、 Quantum well 、 Indium
摘要: GaInNAs/GaAs multiple quantum well (MQW) structures were grown by metalorganic molecular-beam epitaxy (MOMBE). Increase of the N concentration in GaInNAs with increasing In was observed. This trend enhanced incorporation for higher made it possible to realize long-wavelength emission 1.55 μm from a MQW MOMBE. result is compared previous reports on growth alloys and main factors which lead are discussed.
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