Influence of N incorporation on In content in GaInNAs∕GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy
作者： H. F. Liu , N. Xiang , S. J. Chua
DOI: 10.1063/1.2335804
关键词:
摘要: The authors investigated the synthesis of GaIn(N)As∕Ga(N)As multiple quantum wells by molecular beam epitaxy. Introducing N into GaInAs appears to suppress incorporation In as indicated reflective high-energy electron diffraction (RHEED). This effect is mainly due N-induced enhancement surface segregation at growth front and evidenced increasing damping rate RHEED oscillations with incorporation. in GaInNAs confirmed secondary-ion-mass spectroscopy high-resolution x-ray diffractions, its origin discussed.
core.ac.uk
scitation.org
harvard.edu
osti.gov
aip.org
sci-hub.se 参考文章(21)
J. F. Woitok, High-resolution X-ray diffraction and fast routine evaluation of graded hetero-epitaxial layers Journal of Materials Science: Materials in Electronics. ,vol. 12, pp. 295- 298 ,(2001) , 10.1023/A:1011232025103
Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, R. H. Wu, Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy Applied Physics Letters. ,vol. 77, pp. 214- 216 ,(2000) , 10.1063/1.126928
S. Martini, A. A. Quivy, T. E. Lamas, E. C. F. da Silva, Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates Physical Review B. ,vol. 72, pp. 153304- ,(2005) , 10.1103/PHYSREVB.72.153304
H.F. Liu, N. Xiang, S.J. Chua, Annealing behavior of N-bonding configurations in GaN0.023As0.977 ternary alloy grown on GaAs (001) substrate by molecular beam epitaxy Journal of Crystal Growth. ,vol. 290, pp. 24- 28 ,(2006) , 10.1016/J.JCRYSGRO.2005.12.114
V. Liverini, S. Schön, R. Grange, M. Haiml, S. C. Zeller, U. Keller, Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser Applied Physics Letters. ,vol. 84, pp. 4002- 4004 ,(2004) , 10.1063/1.1748841
R Bhat, C Caneau, Lourdes Salamanca-Riba, W Bi, C Tu, Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition Journal of Crystal Growth. ,vol. 195, pp. 427- 437 ,(1998) , 10.1016/S0022-0248(98)00574-0
H. F. Liu, V. Dixit, N. Xiang, Anneal-induced interdiffusion in 1.3-μmGaInNAs∕GaAs quantum well structures grown by molecular-beam epitaxy Journal of Applied Physics. ,vol. 99, pp. 013503- ,(2006) , 10.1063/1.2150259
D.J. Friedman, J.F. Geisz, S.R. Kurtz, J.M. Olson, R. Reedy, Nonlinear dependence of N incorporation on In content in GaInNAs Journal of Crystal Growth. ,vol. 195, pp. 438- 443 ,(1998) , 10.1016/S0022-0248(98)00562-4
E. Tournié, M.-A. Pinault, A. Guzmán, Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing Applied Physics Letters. ,vol. 80, pp. 4148- 4150 ,(2002) , 10.1063/1.1481978
W. Zhou, K. Uesugi, I. Suemune, 1.55 μm emission from GaInNAs with indium-induced increase of N concentration Applied Physics Letters. ,vol. 83, pp. 1992- 1994 ,(2003) , 10.1063/1.1606886