Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micron
作者： V. Dixit , H. F. Liu , N. Xiang
DOI: 10.1007/S11082-006-9042-8
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摘要: The effect of In-segregation on optical properties in 7.5-nm GaInNAs/GaAs single quantum well (QW) is studied theoretically. nominal (In, N) contents the QW are chosen to be (0.35, 0.015) and (0.39, 0.03) for emission wavelengths around 1.3 1.55 μm, respectively. Muraki’s model used composition profiles QWs. In-plane strain, confinement potential, subband energy levels calculated using multi-band effective mass theory. We show a space-indirect transition between light holes localized indium deficient region electrons rich well. Our results that energies approximately constant segregation efficiencies smaller than 0.7 both
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