Nitrogen-Enhanced Indium Segregation in (Ga,In)(N,As)/GaAs Multiple Quantum Wells
作者： E Luna , A Trampert , E-M Pavelescu , M Pessa
DOI: 10.1007/978-1-4020-8615-1_22
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摘要: Transmission electron microscopy (TEM) is used to determine the composition of quaternary (Ga,In)(N,As) quantum wells (QWs). Through a combined analysis chemically sensitive (002) dark-field images and lattice-resolving high-resolution TEM images, local distributions nitrogen indium in growth direction are determined. In particular, we were able directly detect existence segregation QWs. A comparison with distribution profile nitrogen-free (In,Ga)As QWs, grown under similar conditions, revealed that incorporating N into alloy enhanced segregation.
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