Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
作者： G. Patriarche , L. Largeau , J.-C. Harmand , D. Gollub
DOI: 10.1063/1.1639510
关键词: Optoelectronics 、 Electron diffraction 、 Morphology (linguistics) 、 Diffraction 、 Materials science 、 Strain (chemistry) 、 Gallium arsenide 、 Crystallography 、 Transmission electron microscopy 、 Quantum well 、 Substrate (electronics)
摘要: … In the InGaAsN QW Fig. 1b , we also measured a 1.5 nm thickness for the … InGaAsN interface but an average thickness of 3.0 nm is observed for the upper interfacial layer at the InGaAsN…
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