Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots
作者： B. Alloing , C. Zinoni , L. H. Li , A. Fiore , G. Patriarche
DOI: 10.1063/1.2427104
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摘要: Self-assembled InAs∕GaAs quantum dots have been grown at very low InAs growth rate in order to form sparse and large (QDs) emitting the near infrared (1300–1400nm), for application as single-photon sources. The structural optical properties of these QDs a function were systematically investigated. lowest (∼10−3ML∕s) present dot density (∼2×108dots∕cm2), high In content, good size homogeneity. Photoluminescence time-resolved photoluminescence measurements performed different powers temperatures provide information on their luminescence efficiency, recombination processes occurring low-density compared higher densities.
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N. Liu, J. Tersoff, O. Baklenov, A. L. Holmes, C. K. Shih, Nonuniform Composition Profile in In 0.5 Ga 0.5 As Alloy Quantum Dots Physical Review Letters. ,vol. 84, pp. 334- 337 ,(2000) , 10.1103/PHYSREVLETT.84.334
S Raymond, S Fafard, PJ Poole, A Wojs, P Hawrylak, S Charbonneau, D Leonard, R Leon, PM Petroff, JL Merz, None, State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots. Physical Review B. ,vol. 54, pp. 11548- 11554 ,(1996) , 10.1103/PHYSREVB.54.11548
P. B. Joyce, T. J. Krzyzewski, G. R. Bell, T. S. Jones, Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots Applied Physics Letters. ,vol. 79, pp. 3615- 3617 ,(2001) , 10.1063/1.1420579
V. G. Dubrovskii, G. E. Cirlin, V. M. Ustinov, The effective thickness, temperature and growth rate behavior of quantum dot ensembles Physica Status Solidi B-basic Solid State Physics. ,vol. 241, pp. 42- 45 ,(2004) , 10.1002/PSSB.200409049
A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, M. Dähne, Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix Applied Physics Letters. ,vol. 81, pp. 5150- 5152 ,(2002) , 10.1063/1.1533109
M. C. Bartelt, J. W. Evans, Scaling analysis of diffusion-mediated island growth in surface adsorption processes. Physical Review B. ,vol. 46, pp. 12675- 12687 ,(1992) , 10.1103/PHYSREVB.46.12675
Valéry Zwiller, Hans Blom, Per Jonsson, Nikolay Panev, Sören Jeppesen, Tedros Tsegaye, Edgard Goobar, Mats-Erik Pistol, Lars Samuelson, Gunnar Björk, Single quantum dots emit single photons at a time: Antibunching experiments Applied Physics Letters. ,vol. 78, pp. 2476- 2478 ,(2001) , 10.1063/1.1366367
T. J. Krzyzewski, T. S. Jones, Ripening and annealing effects in InAs/GaAs(001) quantum dot formation Journal of Applied Physics. ,vol. 96, pp. 668- 674 ,(2004) , 10.1063/1.1759788
J A Venables, G D T Spiller, M Hanbucken, Nucleation and growth of thin films Reports on Progress in Physics. ,vol. 47, pp. 399- 459 ,(1984) , 10.1088/0034-4885/47/4/002
Weidong Yang, Roger R. Lowe-Webb, Hao Lee, Peter C. Sercel, Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots Physical Review B. ,vol. 56, pp. 13314- 13320 ,(1997) , 10.1103/PHYSREVB.56.13314