State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots.
作者： S Raymond , S Fafard , PJ Poole , A Wojs , P Hawrylak
DOI: 10.1103/PHYSREVB.54.11548
关键词:
摘要: We present radiative lifetime measurements of excited states in semiconductor self-assembled quantum dots. By increasing the photoexcitation intensity, excited-state interband transitions up to n=5 can be observed photoluminescence. The dynamics and intersublevel relaxation these zero-dimensional energy levels lead state filling lower-energy states, allowing Fermi level raised by more than 200 meV due combined large spacing low density states. decay time each obtained under various excitation conditions is used evaluate thermalization time. \textcopyright{} 1996 American Physical Society.
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