Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
作者： J Misiewicz , R Kudrawiec , K Ryczko , G Sęk , A Forchel
DOI: 10.1088/0953-8984/16/31/006
关键词:
摘要: In this paper, we present the application of photoreflectance (PR) spectroscopy to investigate energy level structure GaInNAs-based quantum wells (QWs). Series single GaInNAs/GaAs QWs wit ...
harvard.edu
sci-hub.se 参考文章(64)
J.-Y. Duboz, J. A. Gupta, Z. R. Wasilewski, J. Ramsey, R. L. Williams, G. C. Aers, B. J. Riel, G. I. Sproule, Band-gap energy of In x Ga 1 − x N y As 1 − y as a function of N content Physical Review B. ,vol. 66, pp. 085313- ,(2002) , 10.1103/PHYSREVB.66.085313
W. Rudno-Rudziński, J. Misiewicz, J. Wojcik, B.J. Robinson, D.A. Thompson, P. Mascher, R. Kudrawiec, G. Sęk, Investigation of the non-square InGaAsP/InP quantum wells in the electric field by photoreflectance Acta Physica Polonica A. ,vol. 102, pp. 649- 657 ,(2002) , 10.12693/APHYSPOLA.102.649
R. Chtourou, F. Bousbih, S. Ben Bouzid, F. F. Charfi, J. C. Harmand, G. Ungaro, L. Largeau, Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys Applied Physics Letters. ,vol. 80, pp. 2075- 2077 ,(2002) , 10.1063/1.1462864
G. Sęk, K. Ryczko, J. Misiewicz, M. Bayer, T. Wang, A. Forchel, Influence of Built-in Electric Field on Forbidden Transitions in InxGa1-xAs/GaAs Double Quantum Well by Three-Beam Photoreflectance Acta Physica Polonica A. ,vol. 100, pp. 417- 424 ,(2001) , 10.12693/APHYSPOLA.100.417
Michael C. Y. Chan, Charles Surya, P. K. A. Wai, The effects of interdiffusion on the subbands in GaxIn1−xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths Journal of Applied Physics. ,vol. 90, pp. 197- 201 ,(2001) , 10.1063/1.1370110
E-M Pavelescu, CS Peng, T Jouhti, J Konttinen, W Li, M Pessa, M Dumitrescu, S Spanulescu, None, Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures Applied Physics Letters. ,vol. 80, pp. 3054- 3056 ,(2002) , 10.1063/1.1470223
J. Wagner, T. Geppert, K. Köhler, P. Ganser, N. Herres, N-induced vibrational modes in GaAsN and GaInAsN studied by resonant Raman scattering Journal of Applied Physics. ,vol. 90, pp. 5027- 5031 ,(2001) , 10.1063/1.1412277
G. Baldassarri Höger von Högersthal, A. Polimeni, F. Masia, M. Bissiri, M. Capizzi, D. Gollub, M. Fischer, A. Forchel, Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures Physical Review B. ,vol. 67, pp. 233304- ,(2003) , 10.1103/PHYSREVB.67.233304
C Skierbiszewski, P Perlin, Pl Wisniewski, W Knap, T Suski, W Walukiewicz, W Shan, KM Yu, JW Ager, EE Haller, JF Geisz, JM Olson, None, Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x Applied Physics Letters. ,vol. 76, pp. 2409- 2411 ,(2000) , 10.1063/1.126360
Steven R. Kurtz, J. F. Klem, A. A. Allerman, R. M. Sieg, C. H. Seager, E. D. Jones, Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy Applied Physics Letters. ,vol. 80, pp. 1379- 1381 ,(2002) , 10.1063/1.1453480