TEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs
作者： F Glas , G Patriarche , L Thevenard , A Lemaître
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摘要: We present a TEM method for the analysis of minority constituents in ferromagnetic semiconductor GaMnAs. The relies chiefly on high sensitivity structure factor weak 002-type reflections to concentrations and locations interstitial Mn atoms. High spatial resolution is obtained by combining local measurement from dark field images X-ray analysis. find that interstitials with As neighbours dominate their concentration decreases upon annealing.
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