Investigation of the localization phenomenon in quaternary BInGaAs/GaAs for optoelectronic applications
作者： Tarek Hidouri , Radhia Hamila , Ibtissem Fraj , Faouzi Saidi , Hassen Maaref
DOI: 10.1016/J.SPMI.2016.10.021
关键词: Metalorganic vapour phase epitaxy 、 Diffraction 、 Spectroscopy 、 Band gap 、 Exciton 、 Photoluminescence 、 Materials science 、 Optoelectronics 、 Full width at half maximum 、 Quantum well
摘要: Abstract In this paper, single quantum well (SQW) structure of BxInyGa1-x-yAs/GaAs lattice-matched to GaAs has been grown by metal organic vapor phase epitaxy (MOVPE). The sample was characterized morphologically and structurally using the atomic force microscopy AFM, transmission electron TEM high resolution X-ray diffraction HRXRD measurements. optical study investigated photoluminescence (PL) spectroscopy as a function temperature. PL peak energy, full width at half maximum (FWHM) intensity, versus temperature, exhibit anomalous behaviors such S-shaped N-shaped. They were attributed creation fluctuation potential in band edge host material from non-uniform distribution boron atoms induced exciton localization. We investigate localization phenomenon excitation density variation. Then, quasi-steady state rate-equation model for temperature dependent luminescence spectra localized-state system (LSE) presented quantitatively reinterpret gap emission process. novel analytical models, compared with classical ones, used fit energy evolution. Good agreement between experimental theoretical results observed modified Passler model. Modeling will be discussed based on specified parameters. These can improve fundamental properties quaternary light-emitting optoelectronic devices.
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