Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 µm wavelength

摘要: Abstract In this work, an optical comparative study of InAs quantum dots (QDs) and InAs/In 0.25 Ga 0.75 As dot-in-well (DWELL) grown by molecular beam epitaxy on GaAs (1 1 5)A substrate has been carried out. Emission peak at 1.3 µm achieved from the DWELL sample. It is found that a monotonical decrease integrated PL intensity FWHM taken place, with increasing temperature up to 270 K for QDs However, we observe unusual increase invariant in range (60–150 K). We have attributed result two mechanisms: acoustic–phonon interaction tunnel escaping carriers among inhomogeneous size via piezoelectric field. Theoretical modeling procedure applied analyse ground state position evolution as function using three models (Varshni, “Vina, Logothetidis Cardona”, Passler). The comparison between theoretical experimental data revealed contribution takes place only temperatures higher than 160 K. These results can help improve our understanding some fundamental properties high index substrates.