Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD
作者： T. Hidouri , F. Saidi , H. Maaref , Ph. Rodriguez , L. Auvray
DOI: 10.1016/J.VACUUM.2016.07.018
关键词: Chemical vapor deposition 、 Spectroscopy 、 Luminescence 、 Metalorganic vapour phase epitaxy 、 Photoluminescence 、 Exciton 、 Analytical chemistry 、 Substrate (electronics) 、 Boron 、 Materials science
摘要: … the boron clusters. We have shown that the localization effects increase by increasing boron … Arsine (AsH 3 ) was used for the arsenic source as group V precursor. A GaAs buffer layer …
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