Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect
作者： Tarek Hidouri , Mahitosh Biswas , Indranil Mal , Samia Nasr , Subhananda Chakrabarti
DOI: 10.1016/J.SOLENER.2020.02.032
关键词:
摘要: … for Boron and for arsenic). This … , the boron insertion gives rise to discrete electronic levels into the bandgap originated from isolated single boron (B) atoms and/or boron-boron clusters (…
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