Metalorganic vapor phase epitaxy and characterization of boron‐doped (Al,Ga)As
作者： M. A. Tischler , P. M. Mooney , B. D. Parker , F. Cardone , M. S. Goorsky
DOI: 10.1063/1.351295
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摘要: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) silicon was investigated to examine the effect on (DX) centers in silicon‐doped material. addition diborane results superlinear incorporation into solid a concurrent reduction rate. Boron also decreases as temperature is increased. Additionally, AlAs mole fraction increases increasing during growth. DX center not eliminated by boron. thermal stability these materials investigated.
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F. C. Eversteyn, B. H. Put, Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture Journal of The Electrochemical Society. ,vol. 120, pp. 106- 110 ,(1973) , 10.1149/1.2403378
B. S. Meyerson, W. Olbricht, Phosphorus‐Doped Polycrystalline Silicon via LPCVD I . Process Characterization Journal of The Electrochemical Society. ,vol. 131, pp. 2361- 2365 ,(1984) , 10.1149/1.2115258
P M Mooney, Donor-related levels in GaAs and AlxGa1-xAs Semiconductor Science and Technology. ,vol. 6, ,(1991) , 10.1088/0268-1242/6/10B/001
H. M. Manasevit, W. B. Hewitt, A. J. Nelson, A. R. Mason, The Use of Metalorganics in the Preparation of Semiconductor Materials VIII . Feasibility Studies of the Growth of Group III ‐Group V Compounds of Boron by MOCVD Journal of The Electrochemical Society. ,vol. 136, pp. 3070- 3076 ,(1971) , 10.1149/1.2096403
B. S. Meyerson, M. L. Yu, Phosphorus‐Doped Polycrystalline Silicon via LPCVD II . Surface Interactions of the Silane/Phosphine/Silicon System Journal of The Electrochemical Society. ,vol. 131, pp. 2366- 2368 ,(1984) , 10.1149/1.2115259
M. F. Li, Peter Y. Yu, W. Shan, W. Hansen, E. R. Weber, Effect of boron on the deep donors (DX centers) in GaAs:Si Applied Physics Letters. ,vol. 54, pp. 1344- 1346 ,(1989) , 10.1063/1.100710
M. S. Goorsky, T. F. Kuech, F. Cardone, P. M. Mooney, G. J. Scilla, R. M. Potemski, Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen Applied Physics Letters. ,vol. 58, pp. 1979- 1981 ,(1991) , 10.1063/1.105038
Jiro Osaka, Fumiaki Hyuga, Takashi Kobayashi, Yutaka Yamada, Fumio Orito, Role of boron in electrical properties of semi-insulating GaAs grown by the liquid encapsulated Czochralski method Applied Physics Letters. ,vol. 50, pp. 191- 193 ,(1987) , 10.1063/1.97658
R.W. Glew, Zinc Doping of MOCVD GaAs Journal of Crystal Growth. ,vol. 68, pp. 44- 47 ,(1984) , 10.1016/0022-0248(84)90395-6
Makoto Hirayama, Katsufusa Shohno, Hetero-Epitaxial Growth of Lower Boron Arsenide on Si Substrate Using AsH3-B2H6-H2 System Japanese Journal of Applied Physics. ,vol. 12, pp. 1960- 1961 ,(1973) , 10.1143/JJAP.12.1960