Influence of the substrate orientation on the electronic and optical properties of InAs∕GaAs quantum dots
作者： V. Mlinar , F. M. Peeters
DOI: 10.1063/1.2424435
关键词: Substrate (electronics) 、 Gallium arsenide 、 Materials science 、 Semiconductor quantum dots 、 Quantum dot 、 Optoelectronics 、 Piezoelectricity 、 Orientation (geometry) 、 High index
摘要: Using three-dimensional k∙p calculation including strain and piezoelectricity the authors predict variation of electronic optical properties InAs∕GaAs quantum dots (QDs) with substrate orientation. The QD transition energies are obtained for high index substrates, [11k] where k=1,2,3, compared [001]. They find that size in growth direction determines degree influence orientation: flatter dots, larger difference from reference [001] case.
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