High-gain and low-threshold InAs quantum-dot lasers on InP
作者： P. Caroff , C. Paranthoen , C. Platz , O. Dehaese , H. Folliot
DOI: 10.1063/1.2146063
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摘要: InAs quantum-dot (QD) laser structures are grown on (113)B-oriented InP substrate by gas-source molecular-beam epitaxy. Following an optimized growth procedure, a high density of 1.1×1011cm−2 uniformly sized QDs is achieved. Broad-area lasers containing three stacked QD layers have been realized and tested. Laser emission the ground-state transition (λ=1.59μm) obtained at room temperature (RT), threshold current as low 190A∕cm2. Ground-state modal gain transparency measured to be 7cm−1 23A∕cm2 per dot layer. also demonstrated from (100 K, Jth=33A∕cm2) (350 K), exhibiting insensitive in [100, 170] K range, 55 characteristic RT.
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